62MM Dual IGBT Power Module Medium Power FF200R17KE4HOSA1 SP000713374

Brand Name : Infineon

Model Number : FF200R17KE4HOSA1

Place of Origin : Germany

MOQ : 1PCS

Price : Bargain

Payment Terms : L/C, T/T

Supply Ability : 1000PCS+48hours

Delivery Time : 48hours

Packaging Details : Tray

Infineon : IGBT Modules

Configuration : Dual

Collector-emitter maximum voltage VCEO : 1.7 kV

Collector-emitter saturation voltage : 2.3 V

Continuous collector current at 25C : 310 A

Gate-emitter leakage current : 100 nA

Pd-power dissipation : 1250 W

Minimum working temperature : -40℃

Maximum working temperature : ﹢150℃

Packaging : 10 PCS